for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 1 hmc382lp3 / 382lp3e gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz v01.0610 general description features functional diagram the hmc382lp3 & hmc382lp3e high dynamic range gaas phemt mmic low noise amplifi ers are ideal for gsm & cdma cellular basestation front-end receivers operating between 1.7 and 2.2 ghz. this lna has been optimized to provide 1.0 db noise fi gure, 17 db gain and +30 dbm output ip3 from a single supply of +5v. the hmc382lp3 & hmc382lp3e feature an externally adjustable supply current which allows the designer to tailor the linearity performance of the lna for each application. for applications which require improved noise fi gure, please see the hmc618lp3(e). noise figure: 1 db output ip3: +30 dbm gain: 17 db externally adjustable supply current single positive supply: +5v 50 ohm matched input/output electrical specifi cations, t a = +25 c, vdd1, vdd2 = +5v, rbias = 16 ohms* typical applications the hmc382lp3 / hmc382lp3e is ideal for: ? cellular/3g infrastructure ? base stations & repeaters ? cdma, w-cdma, & td-scdma ? gsm/gprs & edge parameter min. typ. max. min. typ. max. min. typ. max. min. typ. max. units frequency range 1.7 - 1.9 1.9 - 2.0 2.0 - 2.1 2.1 - 2.2 ghz gain 14 17 12 15 11 14 9 12 db gain variation over temperature 0.01 0.015 0.01 0.015 0.01 0.015 0.01 0.015 db/c noise figure 1.0 1.3 1.05 1.35 1.15 1.45 1.2 1.5 db input return loss 13 12 11 10 db output return loss 10 13 12 9 db reverse isolation 37 36 35 35 db output power for 1db compression (p1db) 16 16 15.5 14 dbm output third order intercept (ip3) (-20 dbm input power per tone, 1 mhz tone spacing) 29.5 30 30 29.5 dbm supply current (idd1 + idd2) 67 67 67 67 ma * rbias resistor value sets current. see application circuit herein.
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 2 broadband gain & return loss input return loss vs. temperature noise figure vs. temperature gain vs. temperature -20 -15 -10 -5 0 5 10 15 20 25 0.5 0.75 1 1.25 1.5 1.75 2 2.25 2.5 2.75 3 s21 s11 s22 response (db) frequency (ghz) hmc382lp3 / 382lp3e v01.0610 reverse isolation vs. temperature output return loss vs. temperature -15 -12 -9 -6 -3 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c return loss (db) frequency (ghz) -50 -45 -40 -35 -30 -25 -20 -15 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c isolation (db) frequency (ghz) 0 0.4 0.8 1.2 1.6 2 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c noise figure (db) frequency (ghz) -20 -15 -10 -5 0 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c return loss (db) frequency (ghz) 8 12 16 20 24 1.6 1.7 1.8 1.9 2 2.1 2.2 2.3 +25 c +85 c -40 c gain (db) frequency (ghz) gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 3 typical supply current vs. vdd1 & vdd2 vdd (vdc) idd (ma) +4.5 67.2 +5.0 67.4 +5.5 67.6 drain bias voltage (vdd1, vdd2) +8.0 vdc rf input power (rfin)(vs = +5.0 vdc) +10 dbm channel temperature 150 c continuous pdiss (t = 85 c) (derate 6.94 mw/c above 85 c) 0.451 w thermal resistance (channel to ground paddle) 144 c/ w storage temperature -65 to +150 c operating temperature -40 to +85 c absolute maximum ratings electrostatic sensitive device observe handling precautions hmc382lp3 / 382lp3e v01.0610 recommended bias resistor values for various idd1 & idd2 idd1 + idd2 (ma) rbias (ohms) 60 27 70 16 80 13 100 8.2 120 3.9 gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz gain, noise figure & p1db vs. supply current @ 1900 mhz 12 14 16 18 20 22 24 0.2 0.4 0.6 0.8 1 1.2 1.4 60 70 80 90 100 110 120 gain p1db noise figure gain (db) & p1db (dbm) noise figure (db) supply current (ma) p1db vs. temperature @ idd = 67 ma output ip3 vs. temperature idd = @ 67 ma psat vs. temperature @ idd = 67 ma 10 12 14 16 18 20 1.7 1.8 1.9 2 2.1 2.2 +25 c +85 c -40 c p1db (dbm) frequency (ghz) 20 22 24 26 28 30 32 34 1.7 1.8 1.9 2 2.1 2.2 +25 c +85 c -40 c ip3 (dbm) frequency (ghz) 10 12 14 16 18 20 1.7 1.8 1.9 2 2.1 2.2 +25 c +85 c -40 c psat (dbm) frequency (ghz)
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 4 outline drawing notes: 1. leadframe material: copper alloy 2. dimensions are in inches [millimeters] 3. lead spacing tolerance is non-cumulative 4. pad burr length shall be 0.15mm maximum. pad burr height shall be 0.05mm maximum. 5. package warp shall not exceed 0.05mm. 6. all ground leads and ground paddle must be soldered to pcb rf ground. 7. refer to hittite application note for suggested land pattern. part number package body material lead finish msl rating package marking [3] hmc382lp3 low stress injection molded plastic sn/pb solder msl1 [1] 382 xxxx hmc382lp3e rohs-compliant low stress injection molded plastic 100% matte sn msl1 [2] 382 xxxx [1] max peak refl ow temperature of 235 c [2] max peak refl ow temperature of 260 c [3] 4-digit lot number xxxx package information hmc382lp3 / 382lp3e v01.0610 gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 5 pin number function description interface schematic 1, 4, 5, 7, 9, 12, 14, 16 n/c no connection necessary. these pins may be connected to rf/dc ground. performance will not be affected. 2 rfin this pin is ac coupled and matched to 50 ohms. 3, 6, 10 gnd these pins and package bottom must be connected to rf/dc ground. 8res this pin is used to set the dc current of the amplifi er by selection of external bias resistor. see application circuit. 11 rfout this pin is ac coupled and matched to 50 ohms. 13,15 vdd2, vdd1 power supply voltage. choke inductor and bypass capacitors are required. see application circuit. pin descriptions application circuit note: l1, l2 and c1 should be located as close to pins as possible. hmc382lp3 / 382lp3e v01.0610 gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz
for price, delivery, and to place orders, please contact hittite microwave corporation: 20 alpha road, chelmsford, ma 01824 phone: 978-250-3343 fax: 978-250-3373 order on-line at www.hittite.com amplifiers - low noise - smt 7 7 - 6 item description j1 - j2 pcb mount sma rf connector j3 - j5 dc pin c1 10 pf capacitor, 0402 pkg. c2, c3 1000 pf capacitor, 0603 pkg. c4, c5 15000 pf capacitor, 0603 pkg. l1 56nh inductor, 0603 pkg. l2 18nh inductor, 0603 pkg. r1 resistor, 0402 pkg. u1 hmc382lp3 / hmc382lp3e amplifi er pcb [2] 112580 evaluation pcb [1] reference this number when ordering complete evaluation pcb [2] circuit board material: rogers 4350 evaluation pcb the circuit board used in the application should use rf circuit design techniques. signal lines should have 50 ohm impedance while the package ground leads and exposed ground paddle should be con- nected directly to the ground plane similar to that shown. a sufficient number of via holes should be used to connect the top and bottom ground planes. the evaluation circuit board shown is available from hittite upon request. list of materials for evaluation pcb 112582 [1] hmc382lp3 / 382lp3e v01.0610 gaas phemt mmic low noise amplifier, 1.7 - 2.2 ghz
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